Optical characterization of light-emitting porous silicon

Philippe M. Fauchet; Leonid Tsybeskov; Jury V. Vandyshev; A. Dubois; Chuan Peng

doi:10.1117/12.176849

26 May 1994 Optical characterization of light-emitting porous silicon

Philippe M. Fauchet, Leonid Tsybeskov, Jury V. Vandyshev, A. Dubois, Chuan Peng

Proceedings Volume 2141, Spectroscopic Characterization Techniques for Semiconductor Technology V; (1994) https://doi.org/10.1117/12.176849
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

We report the results of an extensive optical characterization of the properties light-emitting porous silicon (LEPSi), using optical techniques such as Raman spectroscopy, FTIR, cw photoluminescence (PL) and time-resolved PL spectroscopy. Additional insight is obtained from several nonoptical techniques, such as optical and electron microscopy, atomic force microscopy, and various surface physics tools. We examine how to control the surface passivation of LEPSi and what the consequence for light emission are. Samples with widely different surface chemistry have been prepared by controlling the electrochemical processes during anodization or by selected post-anodization treatments such as low- and high- temperature oxidation. In particular, we discuss the relationship between the presence of Si-H, Si-O-H, and Si-O bonds, and the relative strengths of the red PL line have a microsecond(s) ec decay time and the blue PL having a Nsec decay time. These results are compared to the predictions of the leading models that have been proposed to explain the efficient room-temperature luminescence of porous silicon.

Citation Download Citation

Philippe M. Fauchet, Leonid Tsybeskov, Jury V. Vandyshev, A. Dubois, and Chuan Peng "Optical characterization of light-emitting porous silicon", Proc. SPIE 2141, Spectroscopic Characterization Techniques for Semiconductor Technology V, (26 May 1994); https://doi.org/10.1117/12.176849

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