Paper
26 May 1994 Optical determination of (partial) ordering in ordered alloys
Judah Ari Tuchman, Orest J. Glembocki, Roger Sillmon, E. R. Glaser, M. E. Twigg
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Abstract
The joint effects of (partial) ordering and biaxial strain due to lattice mismatch are considers for GaInP2 epilayers grown by organometallic vapor phase epitaxy. on (001) GaAs substrates. Using polarization dependent electromodulation spectroscopy, lattice-matched and moderately mismatched sample of varying degrees of order are characterized in terms of shifted bandgaps, valence band splittings, and the appearance of new, high-energy features that are associated with zone-folded transitions due to a reduction in symmetry of the crystal. Transition energies and selection rules are identified with theoretical estimates tempered by the joint effects of incomplete or partial ordering and biaxial strain due to lattice mismatch. The effects of ordering are also considered in relation to Raman scattering, where it is shown that polarization dependent lineshape anomalies are associated with zone-folded modes, again due to the new (transformed) crystal symmetry.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Judah Ari Tuchman, Orest J. Glembocki, Roger Sillmon, E. R. Glaser, and M. E. Twigg "Optical determination of (partial) ordering in ordered alloys", Proc. SPIE 2141, Spectroscopic Characterization Techniques for Semiconductor Technology V, (26 May 1994); https://doi.org/10.1117/12.176857
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KEYWORDS
Polarization

Raman spectroscopy

Crystals

Gallium arsenide

Raman scattering

Scattering

Semiconductors

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