Paper
30 June 1994 Analysis of current spreading and series resistance in GaAs/AlGaAs proton-implanted top-surface-emitting lasers
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Abstract
We obtain numerical results for the injection current in the active region and the total series electrical resistance of proton-implanted top-surface-emitting lasers with top annular contact. We investigate the variation of the resistance and the current uniformity over a range of values of parameters such as the number of periods in the p-type top spreading region, the active region radius and the specific contact resistance. Approximate analytical expressions are also obtained for the injection current in the confinement region and the agreement between analytical and numerical results is investigated for varying active region radius values.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Marek Osinski, Wlodzimierz Nakwaski, and Petros M. Varangis "Analysis of current spreading and series resistance in GaAs/AlGaAs proton-implanted top-surface-emitting lasers", Proc. SPIE 2146, Physics and Simulation of Optoelectronic Devices II, (30 June 1994); https://doi.org/10.1117/12.178528
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Cited by 3 scholarly publications.
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KEYWORDS
Resistance

Mirrors

Gallium arsenide

Resistors

Aluminum

Differential equations

Interfaces

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