Microscopic treatment of heterolayer transport

Muhammad A. Alam; Mark S. Lundstrom

doi:10.1117/12.178500

30 June 1994 Microscopic treatment of heterolayer transport

Muhammad A. Alam, Mark S. Lundstrom

Proceedings Volume 2146, Physics and Simulation of Optoelectronic Devices II; (1994) https://doi.org/10.1117/12.178500
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

Rigorous techniques to treat electron transport in heterojunction and quantum well devices are described. A scattering matrix approach, which solves the space-dependent, steady-state Boltzmann equation is described along with a transition matrix approach to treat the time-dependent processes in quantum wells. Ultimately, these two techniques can be combined to provide a rigorous and comprehensive treatment of heterojunction and quantum well devices. The objective is to understand the role of heterostructures in semiclassical devices and to illuminate the merits and shortcomings of standard current transport theories of such structures.

Citation Download Citation

Muhammad A. Alam and Mark S. Lundstrom "Microscopic treatment of heterolayer transport", Proc. SPIE 2146, Physics and Simulation of Optoelectronic Devices II, (30 June 1994); https://doi.org/10.1117/12.178500

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available