Transient modeling of GaAs/AlGaAs pnpn optoelectronic switches

Hamid Z. Fardi

doi:10.1117/12.178501

30 June 1994 Transient modeling of GaAs/AlGaAs pnpn optoelectronic switches

Hamid Z. Fardi

Proceedings Volume 2146, Physics and Simulation of Optoelectronic Devices II; (1994) https://doi.org/10.1117/12.178501
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

Four-layer pnpn electrophotonic devices are studied to improve both the dc characteristics and transient switching performance. The performance and analysis of AlGaAs/GaAs pnpn electrophotonic devices are examined numerically against experimental results. Preliminary results are shown to be instrumental and essential in the design and analysis of four-layer AlGaAs/GaAs PNPN bistable optoelectronic devices. The simulation methods studied in this work are aimed at overcoming the limitations of existing simulators.

Citation Download Citation

Hamid Z. Fardi "Transient modeling of GaAs/AlGaAs pnpn optoelectronic switches", Proc. SPIE 2146, Physics and Simulation of Optoelectronic Devices II, (30 June 1994); https://doi.org/10.1117/12.178501

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