Paper
19 August 1994 Fabrication and performances of pseudomorphic high-electron-mobility transistor (PHEMT) Ka-band three-stage amplifiers for phased-array applications
Paul Saunier, Hua Quen Tserng
Author Affiliations +
Proceedings Volume 2211, Millimeter and Submillimeter Waves; (1994) https://doi.org/10.1117/12.182992
Event: Millimeter and Submillimeter Waves and Applications: International Conference, 1994, San Diego, CA, United States
Abstract
A 100-200-400 micrometers pHEMT monolithic amplifier has been developed for Ka-Band operation. This amplifier has achieved the state-of-the-art efficiency of 40% with 235 mW output power and 20.7 dB gain at 31 GHz. Two other circuits with 50-100-200 micrometers and 50-100-250 micrometers gate width have been fabricated in quantity of 100 to 200. This has been made possible by the advance of new fabrication techniques such as RIE dry recess with etch-stop layer which insures uniformity across full three-inch wafers. Amplifiers of this type are being used in a prototype phased-array antenna.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Paul Saunier and Hua Quen Tserng "Fabrication and performances of pseudomorphic high-electron-mobility transistor (PHEMT) Ka-band three-stage amplifiers for phased-array applications", Proc. SPIE 2211, Millimeter and Submillimeter Waves, (19 August 1994); https://doi.org/10.1117/12.182992
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KEYWORDS
Amplifiers

Ka band

Etching

Semiconducting wafers

Fabrication

Gallium arsenide

Antennas

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