Silicide/SiGe Schottky diode infrared detectors

Jorge R. Jimenez; Xiaodong Xiao; James C. Sturm; Paul W. Pellegrini; Melanie M. Weeks

doi:10.1117/12.179716

15 July 1994 Silicide/SiGe Schottky diode infrared detectors

Jorge R. Jimenez, Xiaodong Xiao, James C. Sturm, Paul W. Pellegrini, Melanie M. Weeks

Proceedings Volume 2225, Infrared Detectors and Focal Plane Arrays III; (1994) https://doi.org/10.1117/12.179716
Event: SPIE's International Symposium on Optical Engineering and Photonics in Aerospace Sensing, 1994, Orlando, FL, United States

Abstract

PtSi/Si/SiGe/Si Schottky diode IR detectors with extended and tunable cut-off wavelengths have been fabricated. Cut-off wavelengths depend on the SiGe composition and extend up to 10 micrometers for Si₈₀Ge₂₀. The cut-off wavelengths are also tunable by reverse bias. The tunability is due to the SiGe/Si offset serving as an additional potential barrier behind the Schottky barrier that can be varied in energy by a reverse bias. The sensitivity and range of the tunability is controlled by the SiGe thickness and composition. Cut-off wavelengths tunable from 4 micrometers at zero volts to 10 micrometers at 3 volts have been obtained. Quantum efficiency values are normal for operation at the long- wavelength end, but reduced over the rest of tunable range, because of the greater distance from the PtSi to the SiGe/Si offset.

Citation Download Citation

Jorge R. Jimenez, Xiaodong Xiao, James C. Sturm, Paul W. Pellegrini, and Melanie M. Weeks "Silicide/SiGe Schottky diode infrared detectors", Proc. SPIE 2225, Infrared Detectors and Focal Plane Arrays III, (15 July 1994); https://doi.org/10.1117/12.179716

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