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13 July 1994 Cation impurity interactions in Hg1-xCdxTe
Jose L. Melendez, C. Robert Helms, John H. Tregilgas, Jerome L. Elkind
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Proceedings Volume 2228, Producibility of II-VI Materials and Devices; (1994) https://doi.org/10.1117/12.179650
Event: SPIE's International Symposium on Optical Engineering and Photonics in Aerospace Sensing, 1994, Orlando, FL, United States
Abstract
Cation impurity gettering in Hg1-xCdxTe is described in the context of kinetic process models which include the interactions of the impurities and the dominant native point defects. Experimental results are presented using SIMS profiles of Au distributions in Hg0.8Cd0.2Te following Hg anneals and ion mills, which are processes known to inject excess Hg interstitials. In either process, Au is shown to redistribute preferentially to high vacancy regions. The junction depth of the low to high Au transition is determined by SIMS. For Hg rich anneals of Au-doped, high vacancy concentration material, the Au junction behavior with respect to anneal temperature, time, and initial vacancy concentration is shown to follow that expected for type converted electrical junctions in vacancy-only material. For milled Au-doped material with a high vacancy concentration, the Au junction depths are found to be approximately proportional to the amount of material removed. Neither the Hg anneals nor the mills form Au junctions in starting material with a low background vacancy concentration.
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Jose L. Melendez, C. Robert Helms, John H. Tregilgas, and Jerome L. Elkind "Cation impurity interactions in Hg1-xCdxTe", Proc. SPIE 2228, Producibility of II-VI Materials and Devices, (13 July 1994); https://doi.org/10.1117/12.179650
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KEYWORDS
Gold
Mercury
Cadmium
Process modeling
Tellurium
Ions
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