Ionic conductivity of tantalum oxide films prepared by sol-gel process for electrochromic devices

Nilgun Ozer; Yongxiang He; Carl M. Lampert

doi:10.1117/12.185388

9 September 1994 Ionic conductivity of tantalum oxide films prepared by sol-gel process for electrochromic devices

Nilgun Ozer, Yongxiang He, Carl M. Lampert

Proceedings Volume 2255, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XIII; (1994) https://doi.org/10.1117/12.185388
Event: Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XIII, 1994, Freiburg, Germany

Abstract

Tantalum oxide films were prepared by sol-gel process using tantalum ethoxide Ta(OC₂H₅)₅. The dependence of deposition conditions (i.e. composition of polymeric solutions and spinning rate) on ionic conductivities for tantalum oxide films were studied. The best results achieved for films fabricated by the spin coating technique from clear polymeric solutions. These films had low packing density (rho) equals 3.2 g/cm³ and good proton conductivity (about 10^-6 (Omega) ^-1/cm^-1). X-ray photoelectron spectroscopy (XPS) was used for studying the compositions of the tantalum oxide films. We report on the use of tantalum oxide films as ion conductors in devices consisting of WO₃/Ta₂O₅/H⁺ ion storage polymer structure. We found tantalum oxide to have very good properties for proton device applications.

Citation Download Citation

Nilgun Ozer, Yongxiang He, and Carl M. Lampert "Ionic conductivity of tantalum oxide films prepared by sol-gel process for electrochromic devices", Proc. SPIE 2255, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XIII, (9 September 1994); https://doi.org/10.1117/12.185388

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