Improved PVD TiW manufacturability using advanced chamber shield design

Jay N. Sasserath; Ron Yenchik

doi:10.1117/12.186769

14 September 1994 Improved PVD TiW manufacturability using advanced chamber shield design

Jay N. Sasserath, Ron Yenchik

Proceedings Volume 2334, Microelectronics Manufacturability, Yield, and Reliability; (1994) https://doi.org/10.1117/12.186769
Event: Microelectronic Manufacturing, 1994, Austin, TX, United States

Abstract

A study was performed to reduce TiW particle contamination in a dc magnetron sputtering system. Significant accomplishments were obtained through simplification of shielding for the process chamber and the use of improved materials of construction. Through the implementation of this enhanced hardware, maintainability benefits were obtained in the areas of shield use (66% reduction), equipment downtime (30% reduction), and maintenance labor (> 3 hours/shield change). In addition to these, overall particle counts were reduced significantly. Lastly, improvements in film uniformity across a wafer were improved by 0.5%, 1 (sigma) , based upon sheet resistivity contour maps.

Citation Download Citation

Jay N. Sasserath and Ron Yenchik "Improved PVD TiW manufacturability using advanced chamber shield design", Proc. SPIE 2334, Microelectronics Manufacturability, Yield, and Reliability, (14 September 1994); https://doi.org/10.1117/12.186769

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