Optimization of the MOVPE growth of ZnSe, ZnCdSe alloy and related heterostructures using various zinc precursor adducts

Olivier Briot; N. Briot; T. Cloitre; R. L. Aulombard; F. Liaci; P. Bigenwald; B. Gil; Lesley M. Smith; S. A. Rushworth; Anita C. Jones; Aranka M. Huber; M. Gailhanou; Jean-Michel Sallese

doi:10.1117/12.197248

21 December 1994 Optimization of the MOVPE growth of ZnSe, ZnCdSe alloy and related heterostructures using various zinc precursor adducts

Olivier Briot, N. Briot, T. Cloitre, R. L. Aulombard, F. Liaci, P. Bigenwald, B. Gil, Lesley M. Smith, S. A. Rushworth, Anita C. Jones, Aranka M. Huber, M. Gailhanou, Jean-Michel Sallese

Author Affiliations +

Proceedings Volume 2346, II-VI Blue/Green Laser Diodes; (1994) https://doi.org/10.1117/12.197248
Event: Photonics for Industrial Applications, 1994, Boston, MA, United States

Abstract

Stimulated blue light emission has now been produced via electrical injection through a p-n junction using MBE grown II-VI wide bandgap semiconductors. This is not yet possible using the MOVPE technique, due to the somewhat unsuccessful realization of p-type doping of ZnSe. Microgun pumped lasers (where injection is achieved using an array of microtips as an electron gun) could be an alternative solution, but requires structures of high crystalline quality based on ZnSe/ZnCdSe. In this perspective, we have studied the MOVPE growth of ZnSe layers and ZnCdSe alloys and ZnCdSe based heterostructures using two different zinc precursor adducts: triethylamine-dimethylzinc (TEA:DMZ) and tetramethylmethylenediamine dimethylzinc (TMMD:DMZ). The growth conditions have been investigated and the solid composition versus gas phase composition has been studied for both adducts. The structural properties of ZnSe layers below the critical thickness have been studied versus the initial growth conditions and optimal growth conditions are proposed. Particular attention has been devoted to the investigation of the spectroscopic properties of the heterostuctures in view of the characterization of the abruptness of the heterointerfaces. Photoluminescence, reflectance and photoreflectance experiments will be presented.

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Olivier Briot, N. Briot, T. Cloitre, R. L. Aulombard, F. Liaci, P. Bigenwald, B. Gil, Lesley M. Smith, S. A. Rushworth, Anita C. Jones, Aranka M. Huber, M. Gailhanou, and Jean-Michel Sallese "Optimization of the MOVPE growth of ZnSe, ZnCdSe alloy and related heterostructures using various zinc precursor adducts", Proc. SPIE 2346, II-VI Blue/Green Laser Diodes, (21 December 1994); https://doi.org/10.1117/12.197248

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