Crystal growth of undoped semi-insulating InP

Andrzej Hruban; S. Strzelecka; E. Jurkiewicz Wegner; M. Gladysz; W. Orlowski; M. Piersa; A. Mirowska

doi:10.1117/12.224934

16 October 1995 Crystal growth of undoped semi-insulating InP

Andrzej Hruban, S. Strzelecka, E. Jurkiewicz Wegner, M. Gladysz, W. Orlowski, M. Piersa, A. Mirowska

Proceedings Volume 2373, Solid State Crystals: Materials Science and Applications; (1995) https://doi.org/10.1117/12.224934
Event: Solid State Crystals: Materials Science and Applications, 1994, Zakopane, Poland

Abstract

Nominally undoped and lightly Fe-doped semi-insulating InP can be prepared by thermal annealing under phosphorus vapor pressure. Semi-insulating undoped material obtained in this work has not indicated iron content. Thermal annealing process of InP:Fe with N_Fe <EQ 8 (DOT) 10¹⁶ cm^-3 improves its electrical parameters. The material has been characterized by: Hall effect and conductivity measurements, resistivity and Fe concentration distribution, photoluminescence measurements.

Citation Download Citation

Andrzej Hruban, S. Strzelecka, E. Jurkiewicz Wegner, M. Gladysz, W. Orlowski, M. Piersa, and A. Mirowska "Crystal growth of undoped semi-insulating InP", Proc. SPIE 2373, Solid State Crystals: Materials Science and Applications, (16 October 1995); https://doi.org/10.1117/12.224934

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