Paper
16 October 1995 Experimental comparison of staring IR sensor technologies including PV HgCdTe, PV InGaAs, and quantum well GaAs/AlGaAs
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Proceedings Volume 2373, Solid State Crystals: Materials Science and Applications; (1995) https://doi.org/10.1117/12.224980
Event: Solid State Crystals: Materials Science and Applications, 1994, Zakopane, Poland
Abstract
We compare several key infrared detector technologies versus operating temperature and background flux via hybrid FPA test at operating temperatures from 32.5 K to room temperature and photon backgrounds from mid-105 to approximately equal to 1017 photons/cm2-sec. The detector materials include photovoltaic (PV) HgCdTe/Al2O3, PV HgCdTe/CdZnTe, photoconductive (PC) GaAs/AlGaAs quantum well infrared photodetector (QWIP) and PV InGaAs/InP; the device sizes range from 64 multiplied by 64 to 1024 multiplied by 1024.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lester J. Kozlowski, Jose M. Arias, and William E. Tennant "Experimental comparison of staring IR sensor technologies including PV HgCdTe, PV InGaAs, and quantum well GaAs/AlGaAs", Proc. SPIE 2373, Solid State Crystals: Materials Science and Applications, (16 October 1995); https://doi.org/10.1117/12.224980
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Cited by 4 scholarly publications.
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KEYWORDS
Sensors

Mercury cadmium telluride

Photovoltaics

Quantum well infrared photodetectors

Infrared sensors

Staring arrays

Indium gallium arsenide

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