Paper
10 April 1995 Second harmonic generation in hexagonal SiC
Paul M. Lundquist, Weiping Lin, George K. Wong, Manijeh Razeghi, John B. Ketterson
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Abstract
We report optical second harmonic generation measurements in single crystal (alpha) -SiC of polytype 6H. The sample was found to be optically uniaxial, consistent with the hexagonal symmetry of the crystal structure. The two independent components of the second order electric susceptibility tensor were determined to be d33 equals 43 pm/V and d31 equals -4.3 pm/V. From this data the principle electro-optic coefficient was computed to be r33 equals 100 pm/V. The corresponding figures of merit for nonlinear optical device operation compare favorably with leading materials such as lithium niobate and KTP, and thus the relatively convenient and inexpensive fabrication of 6H SiC thin films could prove useful for integrated optical devices.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Paul M. Lundquist, Weiping Lin, George K. Wong, Manijeh Razeghi, and John B. Ketterson "Second harmonic generation in hexagonal SiC", Proc. SPIE 2379, Solid State Lasers and Nonlinear Crystals, (10 April 1995); https://doi.org/10.1117/12.206502
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Cited by 3 scholarly publications.
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KEYWORDS
Silicon carbide

Crystals

Second-harmonic generation

Nonlinear optics

Fringe analysis

Quartz

Harmonic generation

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