Frequency domain measurements for laser diagnostics of microwave transistors

Garif G. Akchurin; Andrew Yu. Ognishchev

doi:10.1117/12.208449

28 April 1995 Frequency domain measurements for laser diagnostics of microwave transistors

Garif G. Akchurin, Andrew Yu. Ognishchev

Proceedings Volume 2382, Laser Diodes and Applications; (1995) https://doi.org/10.1117/12.208449
Event: Photonics West '95, 1995, San Jose, CA, United States

Abstract

GaAs MESFET dynamic photoresponse under optical illumination by AM light of a laser diode has been investigated both theoretically and experimentally. The possibility of MESFET gain coefficient measurement via laser probing is shown in the frequency range from 100 MHz to 8 GHz.

Citation Download Citation

Garif G. Akchurin and Andrew Yu. Ognishchev "Frequency domain measurements for laser diagnostics of microwave transistors", Proc. SPIE 2382, Laser Diodes and Applications, (28 April 1995); https://doi.org/10.1117/12.208449

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available