Accurate determination of surface coverage in migration-enhanced epitaxy of compound semiconductors

J. K. Furdyna; H. Luo; Steven W. Short; S. H. Xin

doi:10.1117/12.206903

24 April 1995 Accurate determination of surface coverage in migration-enhanced epitaxy of compound semiconductors

J. K. Furdyna, H. Luo, Steven W. Short, S. H. Xin

Proceedings Volume 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices; (1995) https://doi.org/10.1117/12.206903
Event: Photonics West '95, 1995, San Jose, CA, United States

Abstract

We describe a new and highly precise method for determining the surface coverage during epitaxial deposition of compound semiconductors, using migration enhanced epitaxy (MEE). By monitoring the MEE reflection high energy electron diffraction (RHEED) intensity and a simple simulation of RHEED oscillations, one can determine the surface coverage with an accuracy of much better than 0.01 monolayer per cycle of MEE growth. The simplicity of the method makes it practical and convenient for preparing heterostructures with well defined and well characterized interfaces. The specific results reported are for ZnSe and ZnTe, but the method applies equally well to other compound semiconductors in both the II-VI and the III-V families.

Citation Download Citation

J. K. Furdyna, H. Luo, Steven W. Short, and S. H. Xin "Accurate determination of surface coverage in migration-enhanced epitaxy of compound semiconductors", Proc. SPIE 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices, (24 April 1995); https://doi.org/10.1117/12.206903

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