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High quality InSb has been grown by Molecular Beam Epitaxy and optimized using Reflection High Energy Electron Diffraction. A 4.8 micrometers InSb layer grown on GaAs at a growth temperature of 395 degree(s)C and a III/V incorporation ratio of 1:1.2 had an X-ray rocking curve FWHM of 158 arcsec and a Hall mobility of 92300 cm2V-1s-1 at 77 K, the best reported to date for InSb nucleated directly onto GaAs. InSb p-i-n structures of 5.8 micrometers grown under the same conditions demonstrated a X-ray Full Width at Half Maximum of 101 arcsec and 131 arcsec for GaAs and Si substrates, respectively, and exhibited excellent uniformity of +/- 3 arcsec over a 3' substrate. Prototype InSb p-i-n detectors on Si have been fabricated and have demonstrated photovoltaic response at 6.5 micrometers up to 200 K. These p-i-n detectors have also exhibited the highest D* for a device grown onto Si.
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Erick J. Michel, R. Peters, Steven Slivken, Christopher Louis Jelen, P. Bove, Jianren Xu, Ian T. Ferguson, Manijeh Razeghi, "Molecular beam epitaxial growth of InSb p-i-n photodetectors on GaAs and Si," Proc. SPIE 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices, (24 April 1995); https://doi.org/10.1117/12.206888