Optoelectronic GaN-based field effect transistors

Michael S. Shur; Mohamed Asif Khan

doi:10.1117/12.206879

24 April 1995 Optoelectronic GaN-based field effect transistors

Michael S. Shur, Mohamed Asif Khan

Proceedings Volume 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices; (1995) https://doi.org/10.1117/12.206879
Event: Photonics West '95, 1995, San Jose, CA, United States

Abstract

We describe optoelectronic effects in GaN/AlGaN Heterostructure Field Effect Transistors (HFETs) and Heterostructure Insulated Gate Field Effect Transistors (HIGFETs). GaN/AlGaN HFETs operate as visible blind photodetectors with responsivities as high as several thousand A/W for wavelengths from 200 to 365 nanometers. GaN/AlGaN HIGFETs exhibit light- sensitive long term current-voltage characteristic collapse after an application of a high drain- to-source bias. This collapse is removed by illumination with light with certain wavelengths. We suggest that this collapse is a consequence of hot electron trapping in the AlN barrier layer near the drain edge of the gate.

Citation Download Citation

Michael S. Shur and Mohamed Asif Khan "Optoelectronic GaN-based field effect transistors", Proc. SPIE 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices, (24 April 1995); https://doi.org/10.1117/12.206879

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