Use of scanning probe microscopies to study transport in semiconductor heterostructures

Venkatesh Narayanamurti

doi:10.1117/12.206861

24 April 1995 Use of scanning probe microscopies to study transport in semiconductor heterostructures

Venkatesh Narayanamurti

Proceedings Volume 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices; (1995) https://doi.org/10.1117/12.206861
Event: Photonics West '95, 1995, San Jose, CA, United States

Abstract

The use of scanning probe microscopies--such as Scanning Tunneling Microscopy (STM) and Ballistic Electron Emission Microscopy (BEEM) to study carrier transport through semiconductor heterostructures--is reviewed. The ability of BEEM to probe buried structures below the surface can be exploited to study heterostructure band-offsets and resonant tunneling through quantum structures. It will be shown that BEEM can serve as a powerful probe of the spectroscopy of such structures. The implications of such studies for research on quantum dots and the characterization of new optoelectronic materials will be discussed.

Citation Download Citation

Venkatesh Narayanamurti "Use of scanning probe microscopies to study transport in semiconductor heterostructures", Proc. SPIE 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices, (24 April 1995); https://doi.org/10.1117/12.206861

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