Optically induced ultrafast three-band coherences in semiconductor quantum wells

Johan Markus Lindberg; Rolf H. Binder

doi:10.1117/12.212522

19 June 1995 Optically induced ultrafast three-band coherences in semiconductor quantum wells

Johan Markus Lindberg, Rolf H. Binder

Proceedings Volume 2399, Physics and Simulation of Optoelectronic Devices III; (1995) https://doi.org/10.1117/12.212522
Event: Photonics West '95, 1995, San Jose, CA, United States

Abstract

Intervalence band coherences in semiconductor quantum wells induced by femtosecond light pulses are investigated. Especially, the possibility of creating dark states, known from atomic physics, in semiconductor quantum wells, is discussed. The analysis includes many-body effects due to the Coulomb interaction and bandstructure effects appropriate for GaAs quantum wells.

Citation Download Citation

Johan Markus Lindberg and Rolf H. Binder "Optically induced ultrafast three-band coherences in semiconductor quantum wells", Proc. SPIE 2399, Physics and Simulation of Optoelectronic Devices III, (19 June 1995); https://doi.org/10.1117/12.212522

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