Optimization of 1.3-um etched-well surface-emitting laser design

Marek Osinski; Wlodzimierz Nakwaski

doi:10.1117/12.212514

19 June 1995 Optimization of 1.3-um etched-well surface-emitting laser design

Marek Osinski, Wlodzimierz Nakwaski

Proceedings Volume 2399, Physics and Simulation of Optoelectronic Devices III; (1995) https://doi.org/10.1117/12.212514
Event: Photonics West '95, 1995, San Jose, CA, United States

Abstract

A self-consistent analytical thermal-electrical model is developed to simulate thermal properties of etched-well InGaAsP/InP buried-heterostructure VCSELs with dielectric mirrors. The model is then used to investigate the influence of various design parameters on device performance. In particular, we examine the effects of varying the P-cladding doping level, active-region-, mirror-, and well-diameters, solder material, and mirror materials. We find that the dielectric mirrors are the most critical elements of the device. To increase the output power/operation temperature of the device, both mirrors must have high thermal conductivity and minimal scattering loss.

Citation Download Citation

Marek Osinski and Wlodzimierz Nakwaski "Optimization of 1.3-um etched-well surface-emitting laser design", Proc. SPIE 2399, Physics and Simulation of Optoelectronic Devices III, (19 June 1995); https://doi.org/10.1117/12.212514

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