Planar laser-induced fluorescence imaging of Si and SiO during pulsed laser ablation of Si

Phillip H. Paul; Dale L. Capewell; David G. Goodwin

doi:10.1117/12.206278

10 April 1995 Planar laser-induced fluorescence imaging of Si and SiO during pulsed laser ablation of Si

Phillip H. Paul, Dale L. Capewell, David G. Goodwin

Proceedings Volume 2403, Laser-Induced Thin Film Processing; (1995) https://doi.org/10.1117/12.206278
Event: Photonics West '95, 1995, San Jose, CA, United States

Abstract

Planar laser induced fluorescence has been used to acquire time sequence images of ground-state, neutral Si and SiO during laser ablation of an Si target in vacuum and in the presence of a background gas at a fluence of 3-4 J/cm². The SiO images, taken in air, strongly suggest that the observed SiO is created through reaction of silicon with oxygen at the contact front as the plume expands.

Citation Download Citation

Phillip H. Paul, Dale L. Capewell, and David G. Goodwin "Planar laser-induced fluorescence imaging of Si and SiO during pulsed laser ablation of Si", Proc. SPIE 2403, Laser-Induced Thin Film Processing, (10 April 1995); https://doi.org/10.1117/12.206278

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