Paper
10 April 1995 Measurement of kinds of thresholds during the interaction between the laser beam and the CCD
Xiao-Wu Ni, Jian Lu, Zhen-Hua Lin, Anzhi He
Author Affiliations +
Proceedings Volume 2415, Charge-Coupled Devices and Solid State Optical Sensors V; (1995) https://doi.org/10.1117/12.206520
Event: IS&T/SPIE's Symposium on Electronic Imaging: Science and Technology, 1995, San Jose, CA, United States
Abstract
The interaction process of laser and charge-coupled devices (CCD) having MOS structure has been analyzed in brief, and several kinds of damage thresholds have been put forward. On the basis of experimental test, the heat melting threshold, optical breakdown threshold, and direct damage threshold produced by a Q-switched Nd:YAG laser acted the CCD and laser energy threshold causing the whole device to fail have been obtained first.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xiao-Wu Ni, Jian Lu, Zhen-Hua Lin, and Anzhi He "Measurement of kinds of thresholds during the interaction between the laser beam and the CCD", Proc. SPIE 2415, Charge-Coupled Devices and Solid State Optical Sensors V, (10 April 1995); https://doi.org/10.1117/12.206520
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Laser damage threshold

Charge-coupled devices

Aluminum

Laser energy

Pulsed laser operation

Ionization

Molybdenum

Back to Top