Radiation-hardened backside-illuminated 512 x 512 charge-coupled device

Philip A. Bates; Peter A. Levine; Donald J. Sauer; Fu-Lung Hsueh; Frank V. Shallcross; Ronald K. Smeltzer; Grazyna M. Meray; Gordon Charles Taylor; John R. Tower

doi:10.1117/12.206514

10 April 1995 Radiation-hardened backside-illuminated 512 x 512 charge-coupled device

Philip A. Bates, Peter A. Levine, Donald J. Sauer, Fu-Lung Hsueh, Frank V. Shallcross, Ronald K. Smeltzer, Grazyna M. Meray, Gordon Charles Taylor, John R. Tower

Author Affiliations +

Proceedings Volume 2415, Charge-Coupled Devices and Solid State Optical Sensors V; (1995) https://doi.org/10.1117/12.206514
Event: IS&T/SPIE's Symposium on Electronic Imaging: Science and Technology, 1995, San Jose, CA, United States

Abstract

A four-port 512 X 512 charge coupled device (CCD) imager hardened against proton displacement damage and total dose degradation has been fabricated and tested. The device is based upon an established thinned, backside illuminated, triple polysilicon, buried channel CCD process technology. The technology includes buried blooming drains. A three step approach has been taken to hardening the device. The first phase addressed hardening against proton displacement damage. The second phase addressed hardening against both proton displacement damage and total dose degradation. The third phase addresses final optimization of the design. Test results from the first and second phase efforts are presented. Plans for the third phase are discussed.

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Philip A. Bates, Peter A. Levine, Donald J. Sauer, Fu-Lung Hsueh, Frank V. Shallcross, Ronald K. Smeltzer, Grazyna M. Meray, Gordon Charles Taylor, and John R. Tower "Radiation-hardened backside-illuminated 512 x 512 charge-coupled device", Proc. SPIE 2415, Charge-Coupled Devices and Solid State Optical Sensors V, (10 April 1995); https://doi.org/10.1117/12.206514

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