Growth and characterization of laser-ablated boron nitride thin films

Zhouling Wu; Roger W. Pryor; K. R. Padmanabhan; S. Villanueva; Robert L. Thomas

doi:10.1117/12.213716

14 July 1995 Growth and characterization of laser-ablated boron nitride thin films

Zhouling Wu, Roger W. Pryor, K. R. Padmanabhan, S. Villanueva, Robert L. Thomas

Author Affiliations +

Proceedings Volume 2428, Laser-Induced Damage in Optical Materials: 1994; (1995) https://doi.org/10.1117/12.213716
Event: Laser-Induced Damage in Optical Materials: 1994, 1994, Boulder, CO, United States

Abstract

Recent work is reported on the growth and characterization of boron nitride thin films on 1 cm² Si (100) substrates by a newly developed reactive laser ablation technique. The exact nature of the resulting films is highly process dependent and is analyzed by ion channeling and Fourier transform infrared spectroscopy (FTIR). The thermal properties of these films are studied by thermal wave analysis, and they are found to be highly dependent on the crystallographic structure. This value is believed to be the best thermal conductivity measured for boron nitride films to date.

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Zhouling Wu, Roger W. Pryor, K. R. Padmanabhan, S. Villanueva, and Robert L. Thomas "Growth and characterization of laser-ablated boron nitride thin films", Proc. SPIE 2428, Laser-Induced Damage in Optical Materials: 1994, (14 July 1995); https://doi.org/10.1117/12.213716

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