Assessment of silicon carbide x-ray mask overlay performance in the IBM Advanced Lithography Facility x-ray stepper

Kurt R. Kimmel; Alek C. Chen; Lynn A. Powers; Ben R. Vampatella

doi:10.1117/12.209176

19 May 1995 Assessment of silicon carbide x-ray mask overlay performance in the IBM Advanced Lithography Facility x-ray stepper

Kurt R. Kimmel, Alek C. Chen, Lynn A. Powers, Ben R. Vampatella

Author Affiliations +

Proceedings Volume 2437, Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing V; (1995) https://doi.org/10.1117/12.209176
Event: SPIE's 1995 Symposium on Microlithography, 1995, Santa Clara, CA, United States

Abstract

This paper presents the results of a study to explicitly assess the performance of silicon carbide masks by directly measuring overlay accuracy and precision of exposures made on a state-of-the-art commercially available x-ray stepper, the Suss XRS200/3. The work was done using a mask fabricated at IBM from silicon carbide coated wafers obtained from HOYA Electronics Corp. with exposures completed at IBM's Advanced Lithography Facility (ALF) using synchrotron-generated radiation. The mask pattern design contains many overlay measurement fiducials, resolution patterns, and alignment verniers, and two sets of three alignment marks: one set inboard (kerf) and one set outboard. The performance of an imaging-based alignment system, such as the ALX system on the Suss XRS200/3 steppers, varies depending upon the optical characteristics of the alignment marks on the mask and wafer.

Citation Download Citation

Kurt R. Kimmel, Alek C. Chen, Lynn A. Powers, and Ben R. Vampatella "Assessment of silicon carbide x-ray mask overlay performance in the IBM Advanced Lithography Facility x-ray stepper", Proc. SPIE 2437, Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing V, (19 May 1995); https://doi.org/10.1117/12.209176

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