Progress on accurate metrology of pitch, height, roughness, and width artifacts using an atomic force microscope

Jason Schneir; Thomas H. McWaid; Ronald G. Dixson; Vincent Wen-Chieh Tsai; John S. Villarrubia; Ellen D. Williams; E. Fu

doi:10.1117/12.209224

22 May 1995 Progress on accurate metrology of pitch, height, roughness, and width artifacts using an atomic force microscope

Jason Schneir, Thomas H. McWaid, Ronald G. Dixson, Vincent Wen-Chieh Tsai, John S. Villarrubia, Ellen D. Williams, E. Fu

Author Affiliations +

Proceedings Volume 2439, Integrated Circuit Metrology, Inspection, and Process Control IX; (1995) https://doi.org/10.1117/12.209224
Event: SPIE's 1995 Symposium on Microlithography, 1995, Santa Clara, CA, United States

Abstract

NIST personnel (J.S. and T.M.) visited 23 IC manufacturing companies and equipment suppliers during 1994 to determine semiconductor industry needs for scanned probe metrology. NIST has initiated projects addressing some of the need identified. When complete these projects will enable improved metrology using the scanned probe microscope. Industry needs include pitch, height, angle, and width calibration artifacts, and understanding of the effect of humidity on AFM measurements, and tip metrology techniques. To meet these needs we have designed and built a Calibrated Atomic Force Microscope (C-AFM) with interferometric position control. This AFM is capable of making accurate measurements. We present the operational characteristics of the instrument, accurate X, Y, and Z pitch measurements on a commercially available artifact, measurements on a prototype surface roughness artifact, and a promising technique by which to make accurate linewidth measurements.

Citation Download Citation

Jason Schneir, Thomas H. McWaid, Ronald G. Dixson, Vincent Wen-Chieh Tsai, John S. Villarrubia, Ellen D. Williams, and E. Fu "Progress on accurate metrology of pitch, height, roughness, and width artifacts using an atomic force microscope", Proc. SPIE 2439, Integrated Circuit Metrology, Inspection, and Process Control IX, (22 May 1995); https://doi.org/10.1117/12.209224

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