Laser-induced upset of HgCdTe IR detectors

Vaidya Nathan

doi:10.1117/12.210567

30 May 1995 Laser-induced upset of HgCdTe IR detectors

Vaidya Nathan

Proceedings Volume 2474, Smart Focal Plane Arrays and Focal Plane Array Testing; (1995) https://doi.org/10.1117/12.210567
Event: SPIE's 1995 Symposium on OE/Aerospace Sensing and Dual Use Photonics, 1995, Orlando, FL, United States

Abstract

The fluence of pulsed lasers of wavelength 4 and 10.6 microns necessary to induce one and two orders of magnitude temporary degradation in the R₀A values of Hg_0.7Cd_0.3Te p/n infrared detectors at 100 K, and Hg_0.78Cd_0.22Te p/n infrared detectors at 40 K have been calculated. A nonparabolic energy-momentum relationship and temperature dependent energy gap of HgCdTe were used in this calculation. The R₀A values used in this calculation were obtained by simultaneously including generation-recombination, diffusion and tunneling mechanisms.

Citation Download Citation

Vaidya Nathan "Laser-induced upset of HgCdTe IR detectors", Proc. SPIE 2474, Smart Focal Plane Arrays and Focal Plane Array Testing, (30 May 1995); https://doi.org/10.1117/12.210567

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