Selective material ablation by the TEA CO2 laser

Tetsumi Sumiyoshi; Akira Shiratori; Yutaka Ninomiya; Minoru Obara

doi:10.1117/12.204977

31 March 1995 Selective material ablation by the TEA CO2 laser

Tetsumi Sumiyoshi, Akira Shiratori, Yutaka Ninomiya, Minoru Obara

Proceedings Volume 2502, Gas Flow and Chemical Lasers: Tenth International Symposium; (1995) https://doi.org/10.1117/12.204977
Event: Gas Flow and Chemical Lasers: Tenth International Symposium, 1994, Friedrichshafen, Germany

Abstract

This paper reports two topics in the material processing using TEA CO₂ lasers. We demonstrated selective ablation of hydrogenated amorphous silicon (a-Si:H) thin layer on a quartz substrate by the second harmonic (SH) radiation of TEA CO₂ laser generated by AgGaSe₂ nonlinear crystal. Si-H bonds contained in a-Si:H strongly absorb the 5 micrometers SH radiation and resulted in the selective ablation of the a-Si:H layer. The successful ablation processing of ethylenetetrafluoroethylene (ETFE) copolymer by the 9.6 micrometers fundamental wavelength TEA CO₂ laser is also reported. Only ETFE thin film adhered to an aluminum substrate can be ablated by the TEA CO₂ laser.

Citation Download Citation

Tetsumi Sumiyoshi, Akira Shiratori, Yutaka Ninomiya, and Minoru Obara "Selective material ablation by the TEA CO2 laser", Proc. SPIE 2502, Gas Flow and Chemical Lasers: Tenth International Symposium, (31 March 1995); https://doi.org/10.1117/12.204977

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