Paper
25 September 1995 Compensation for rapid contrast variations and correction for charging effects in scanning ion microscopy
Sam T. Davies
Author Affiliations +
Abstract
Focused ion beam systems are now widely used tools at several stages of semiconductor device production and are finding applications in many other areas. Frequently, it is necessary to combine processing by micromachining or microdeposition with the intrinsic scanning ion microscope function of focused ion beam instruments. A problem in so doing is that image quality can change rapidly during processing as a result of changing secondary electron or secondary ion yields. Moreover, when milling insulating materials, charging effects can give rise to both spatial and temporal variations in contrast. This paper describes a method of achieving closed-loop, automated, compensation for image contrast variations which is also applicable to reducing image degradation due to charging effects in scanning ion microscopy.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sam T. Davies "Compensation for rapid contrast variations and correction for charging effects in scanning ion microscopy", Proc. SPIE 2522, Electron-Beam Sources and Charged-Particle Optics, (25 September 1995); https://doi.org/10.1117/12.221600
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KEYWORDS
Ions

Image processing

Image quality

Video

Amplifiers

Microscopy

Ion beams

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