Electro-optical characterization of epitaxial and polycrystalline CoSi2 Schottky diodes

Elisenda Roca; K. Kyllesbech Larsen; Sabine Kolodinski; Robert P. Mertens

doi:10.1117/12.218245

8 September 1995 Electro-optical characterization of epitaxial and polycrystalline CoSi2 Schottky diodes

Elisenda Roca, K. Kyllesbech Larsen, Sabine Kolodinski, Robert P. Mertens

Proceedings Volume 2552, Infrared Technology XXI; (1995) https://doi.org/10.1117/12.218245
Event: SPIE's 1995 International Symposium on Optical Science, Engineering, and Instrumentation, 1995, San Diego, CA, United States

Abstract

The infrared response of polycrystalline and epitaxial CoSi₂/Si Schottky diodes with similar silicide thickness has been measured. For the polycrystalline diodes the quantum efficiency is found to be two times higher than for the epitaxial diodes, although both types of diodes present very similar barrier height. The observed improvement is attributed to grain boundary scattering of the excited carriers.

Citation Download Citation

Elisenda Roca, K. Kyllesbech Larsen, Sabine Kolodinski, and Robert P. Mertens "Electro-optical characterization of epitaxial and polycrystalline CoSi2 Schottky diodes", Proc. SPIE 2552, Infrared Technology XXI, (8 September 1995); https://doi.org/10.1117/12.218245

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available