Long-wavelength n+-on-p HgCdTe photodiodes: theoretical predictions and experimental data

Antoni Rogalski; Robert Ciupa

doi:10.1117/12.218238

8 September 1995 Long-wavelength n+-on-p HgCdTe photodiodes: theoretical predictions and experimental data

Antoni Rogalski, Robert Ciupa

Proceedings Volume 2552, Infrared Technology XXI; (1995) https://doi.org/10.1117/12.218238
Event: SPIE's 1995 International Symposium on Optical Science, Engineering, and Instrumentation, 1995, San Diego, CA, United States

Abstract

The performance of long wavelength infrared (LWIR) n⁺-on-p HgCdTe photodiodes is re-examined theoretically. It is assumed that the performance of photodiodes is due to thermal generation governed by the auger mechanism. The investigations are carried out for photodiodes operated in temperature range between 300 and 50 K. The effect of doping profiles on the photodiode parameters (R_oA product, I-V characteristic, photoelectrical gain and noise) is solved by forward-condition steady-state analysis. The theoretical predictions of photodiode parameters are compared with experimental data obtained by the research group at the LETI. Excellent agreement between both types of results indicate that experimentally measured performance of n⁺-on-p HgCdTe LWIR photodiodes are determined by the auger thermal generation mechanism.

Citation Download Citation

Antoni Rogalski and Robert Ciupa "Long-wavelength n+-on-p HgCdTe photodiodes: theoretical predictions and experimental data", Proc. SPIE 2552, Infrared Technology XXI, (8 September 1995); https://doi.org/10.1117/12.218238

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