Advances in infrared antimonide technology

William F. Micklethwaite

doi:10.1117/12.218185

1 September 1995 Advances in infrared antimonide technology

William F. Micklethwaite

Proceedings Volume 2554, Growth and Characterization of Materials for Infrared Detectors II; (1995) https://doi.org/10.1117/12.218185
Event: SPIE's 1995 International Symposium on Optical Science, Engineering, and Instrumentation, 1995, San Diego, CA, United States

Abstract

Recently, significant advances have been made in both the application and production of the narrow gap, antimonide compound semiconductors. Growth of InSb and GaSb at 3 and even 4 inch diameters has been achieved with good homogeneity and acceptable defect density. Advances are being made to achieve a wafer surface finish suitable for direct epitaxy. New binary applications for large-area focalplane detector arrays, high resistivity substrates and thermophotovoltaics, and for the ternary (Ga,In)Sb are discussed.

Citation Download Citation

William F. Micklethwaite "Advances in infrared antimonide technology", Proc. SPIE 2554, Growth and Characterization of Materials for Infrared Detectors II, (1 September 1995); https://doi.org/10.1117/12.218185

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