Evaluation of HgCdTe using laser beam induced current

Kenji Arinaga; Kazuo Ozaki; Gen Sudo; Nobuyuki Kajihara

doi:10.1117/12.218178

1 September 1995 Evaluation of HgCdTe using laser beam induced current

Kenji Arinaga, Kazuo Ozaki, Gen Sudo, Nobuyuki Kajihara

Proceedings Volume 2554, Growth and Characterization of Materials for Infrared Detectors II; (1995) https://doi.org/10.1117/12.218178
Event: SPIE's 1995 International Symposium on Optical Science, Engineering, and Instrumentation, 1995, San Diego, CA, United States

Abstract

We have developed a nondestructive evaluation method for HgCdTe. We focused on laser beam induced current (LBIC) which features a high specific resolution and nondestructive evaluation. The LBIC technique shows the electrically active regions in HgCdTe wafer as an image. We have considered the measurement temperature versus the LBIC signal. The LBIC technique at room temperature (300 K) can be used to evaluate non-uniformities in carrier concentrations in HgCdTe more sensitively. Using etch pit studies and secondary ion mass spectroscopy (SIMS), we have identified that non-uniformities of carrier concentration in the HgCdTe wafer arise from metal impurities around dislocation clusters. This nondestructive technique is useful for screening HgCdTe wafers before fabricating devices.

Citation Download Citation

Kenji Arinaga, Kazuo Ozaki, Gen Sudo, and Nobuyuki Kajihara "Evaluation of HgCdTe using laser beam induced current", Proc. SPIE 2554, Growth and Characterization of Materials for Infrared Detectors II, (1 September 1995); https://doi.org/10.1117/12.218178

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