Processing and characterization of a 128 x 128 GaAs/GaAlAs quantum well infrared detector array

Shmuel I. Borenstain; Uriel Arad; S. Afanasyev; I. Luybina; A. Segal

doi:10.1117/12.218184

1 September 1995 Processing and characterization of a 128 x 128 GaAs/GaAlAs quantum well infrared detector array

Shmuel I. Borenstain, Uriel Arad, S. Afanasyev, I. Luybina, A. Segal

Proceedings Volume 2554, Growth and Characterization of Materials for Infrared Detectors II; (1995) https://doi.org/10.1117/12.218184
Event: SPIE's 1995 International Symposium on Optical Science, Engineering, and Instrumentation, 1995, San Diego, CA, United States

Abstract

A 128 multiplied by 128 GaAs/GaAlAs quantum well infrared (QWIP) sensing array with a 2- D grating and indium bumps has been fabricated. The array has been characterized prior to flip chip bonding, both electrically and optically. The obtained responsivity and dark current of selected pixels in the array indicate high material uniformity. Design and processing issues are discussed.

Citation Download Citation

Shmuel I. Borenstain, Uriel Arad, S. Afanasyev, I. Luybina, and A. Segal "Processing and characterization of a 128 x 128 GaAs/GaAlAs quantum well infrared detector array", Proc. SPIE 2554, Growth and Characterization of Materials for Infrared Detectors II, (1 September 1995); https://doi.org/10.1117/12.218184

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