Long-term stability of ion-sensitive field effect transistors: Si3N4, Al2O3, and Ta2O5 membranes drift

Dorota Pijanowska; Wladislaw Torbicz; M. Konwicki

doi:10.1117/12.213163

30 June 1995 Long-term stability of ion-sensitive field effect transistors: Si₃N₄, Al₂O₃, and Ta₂O₅ membranes drift

Dorota Pijanowska, Wladislaw Torbicz, M. Konwicki

Proceedings Volume 2634, Optoelectronic and Electronic Sensors; (1995) https://doi.org/10.1117/12.213163
Event: Optoelectronic and Electronic Sensors, 1994, Warsaw-Zegrze, Poland

Abstract

Long-term stability of ion sensitive field effect transistors with inorganic membranes, dependent on the time drift phenomena is analyzed. The results presented in the paper relate to the Si₃N₄, Al₂O₃ and Ta₂O₅ membranes pH-ISFETs drift with the respect to the following parameters: sensitivity, linearity, linear time drift coefficient of threshold voltage and hysteresis.

Citation Download Citation

Dorota Pijanowska, Wladislaw Torbicz, and M. Konwicki "Long-term stability of ion-sensitive field effect transistors: Si₃N₄, Al₂O₃, and Ta₂O₅ membranes drift", Proc. SPIE 2634, Optoelectronic and Electronic Sensors, (30 June 1995); https://doi.org/10.1117/12.213163

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