Novel low-stress SiO2-xFx film deposited by room-temperture liquid-phase deposition method

Ching-Fa Yeh; Shyue-Shyh Lin

doi:10.1117/12.221287

19 September 1995 Novel low-stress SiO_2-xF_x film deposited by room-temperture liquid-phase deposition method

Ching-Fa Yeh, Shyue-Shyh Lin

Proceedings Volume 2639, Micromachining and Microfabrication Process Technology; (1995) https://doi.org/10.1117/12.221287
Event: Micromachining and Microfabrication, 1995, Austin, TX, United States

Abstract

To develop a low-stress thin film for micromachined devices, a novel liquid-phase deposition (LPD) SiO_{2 - x}F_x technique utilizing silica-saturated H₂SiF₆ solution with H₂O addition only is proposed. Due to extremely low-temperature processing and fluorine incorporation, the stress of the LPD SiO_{2 - x}F_x film can be less than 100 MPa. In this paper, we found that the deposition parameter of H₂O addition has much efect on the stress of as-deposited LPD oxide. The stress variations with thermal cycling has also been clarified. We found that the LPD SiO_{2 - x}F_x film will be a good candidate as low-stress film for micromachined devices.

Citation Download Citation

Ching-Fa Yeh and Shyue-Shyh Lin "Novel low-stress SiO_2-xF_x film deposited by room-temperture liquid-phase deposition method", Proc. SPIE 2639, Micromachining and Microfabrication Process Technology, (19 September 1995); https://doi.org/10.1117/12.221287

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