Ambipolar diffusion length measurements in a-Si:H by constant photocurrent method (CPM)

Valerie A. Ligachov

doi:10.1117/12.226147

3 November 1995 Ambipolar diffusion length measurements in a-Si:H by constant photocurrent method (CPM)

Valerie A. Ligachov

Proceedings Volume 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics; (1995) https://doi.org/10.1117/12.226147
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1995, Kiev, Ukraine

Abstract

Diffusion length (L) is one of the major parameters of semiconductor materials and can serve as an objective criterion of their quality. It stipulated the necessity of improvement of existing and development of new experimental methods of determination of the diffusion length. Especially in actuality when such a task is presented for disordered semiconductor materials, which are formed in nonequilibrium conditions, and, strictly speaking, electrophysical characteristics of each prepared sample are unique.

Citation Download Citation

Valerie A. Ligachov "Ambipolar diffusion length measurements in a-Si:H by constant photocurrent method (CPM)", Proc. SPIE 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (3 November 1995); https://doi.org/10.1117/12.226147

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