Diagnostics of glassy semiconductors by nonlinear absorptive methods

Ishtvan V. Fekeshgazi; Konstantin V. May; Vladymyr M. Mitsa; V. V. Roman

doi:10.1117/12.226177

3 November 1995 Diagnostics of glassy semiconductors by nonlinear absorptive methods

Ishtvan V. Fekeshgazi, Konstantin V. May, Vladymyr M. Mitsa, V. V. Roman

Proceedings Volume 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics; (1995) https://doi.org/10.1117/12.226177
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1995, Kiev, Ukraine

Abstract

The dependencies of linear losses coefficient (alpha) , two-photon absorption constant (beta) , optical damage threshold I_p and pseudogap width E₀ on structure and concentration changes of glasses from the glass-forming region of Ge-As-S system along the As-GeS₂, As-Ge₂S₃, As₂S₃-GeS₂ and As₂S₃-Ge₂S₃ sections have been experimentally studied. The critical values of concentration and average coordination number at which the (alpha) , (beta) , and I_p reach their extremes were determined. These results have been discussed in terms of phase and structure-topological transitions.

Citation Download Citation

Ishtvan V. Fekeshgazi, Konstantin V. May, Vladymyr M. Mitsa, and V. V. Roman "Diagnostics of glassy semiconductors by nonlinear absorptive methods", Proc. SPIE 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (3 November 1995); https://doi.org/10.1117/12.226177

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