Methods of testing light-emitting elements and devices for middle- and far-IR spectral regions based on negative luminescence phenomena

Sergej S. Bolgov; Victor A. Botte; Lyudmila I. Konopaltseva; Victor I. Pipa; Anna P. Savchenko

doi:10.1117/12.226200

3 November 1995 Methods of testing light-emitting elements and devices for middle- and far-IR spectral regions based on negative luminescence phenomena

Sergej S. Bolgov, Victor A. Botte, Lyudmila I. Konopaltseva, Victor I. Pipa, Anna P. Savchenko

Author Affiliations +

Proceedings Volume 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics; (1995) https://doi.org/10.1117/12.226200
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1995, Kiev, Ukraine

Abstract

The complex method for determination of the important parameters of narrow-gap semiconductors and devices on their base at room and higher temperatures from the analysis of field and temperature dependences of the negative luminescence phenomenon has been developed. The study of the lifetime, surface recombination velocity and composition of narrow-gap epitaxial Hg_1-xCd_xTe films has been reported.

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Sergej S. Bolgov, Victor A. Botte, Lyudmila I. Konopaltseva, Victor I. Pipa, and Anna P. Savchenko "Methods of testing light-emitting elements and devices for middle- and far-IR spectral regions based on negative luminescence phenomena", Proc. SPIE 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (3 November 1995); https://doi.org/10.1117/12.226200

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