Vertical-cavity surface-emitting lasers come of age

Robert A. Morgan; John A. Lehman; Mary K. Hibbs-Brenner

doi:10.1117/12.237688

10 April 1996 Vertical-cavity surface-emitting lasers come of age

Robert A. Morgan, John A. Lehman, Mary K. Hibbs-Brenner

Proceedings Volume 2683, Fabrication, Testing, and Reliability of Semiconductor Lasers; (1996) https://doi.org/10.1117/12.237688
Event: Photonics West '96, 1996, San Jose, CA, United States

Abstract

This manuscript reviews our efforts in demonstrating state-of-the-art planar, batch-fabricable, high-performance vertical-cavity surface-emitting lasers (VCSELs). All performance requirements for short-haul data communication applications are clearly established. We concentrate on the flexibility of the established proton-implanted AlGaAs-based (emitting near 850 nm) technology platform, focusing on a standard device design. This structure is shown to meet or exceed performance and producibility requirements. These include > 99% device yield across 3-in-dia. metal-organic vapor phase epitaxy (MOVPE)-grown wafers and wavelength operation across a > 100-nm range. Recent progress in device performance [low threshold voltage (V_th equals 1.53 V); threshold current (I_th equals 0.68 mA); continuous wave (CW) power (P_cw equals 59 mW); maximum and minimum CW lasing temperature (T equals 200 degree(s)C, 10 K); and wall-plug efficiencies ((eta) _wp equals 28%)] should enable great advances in VCSEL-based technologies. We also discuss the viability of VCSELs in cryogenic and avionic/military environments. Also reviewed is a novel technique, modifying this established platform, to engineer low-threshold, high-speed, single- mode VCSELs.

Citation Download Citation

Robert A. Morgan, John A. Lehman, and Mary K. Hibbs-Brenner "Vertical-cavity surface-emitting lasers come of age", Proc. SPIE 2683, Fabrication, Testing, and Reliability of Semiconductor Lasers, (10 April 1996); https://doi.org/10.1117/12.237688

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