Electrical characterization of p-type Zn(Se,Te):N semiconductor layers

Thomas Marshall; Michael D. Pashley; Albert Sicignano; L. Zhao

doi:10.1117/12.238979

1 May 1996 Electrical characterization of p-type Zn(Se,Te):N semiconductor layers

Thomas Marshall, Michael D. Pashley, Albert Sicignano, L. Zhao

Proceedings Volume 2693, Physics and Simulation of Optoelectronic Devices IV; (1996) https://doi.org/10.1117/12.238979
Event: Photonics West '96, 1996, San Jose, CA, United States

Abstract

We have grown p-type ZnSe_1-xTe_x:N (x equals 0.08 - 1.0) epilayers by molecular beam epitaxy on GaAs substrates, and characterized their electrical behavior. The Te fraction x was determined by energy-dispersive x-ray spectroscopy and by high-resolution x-ray diffraction. The free-hole concentrations and mobilities were determined by Hall-effect measurements, and the contact resistances of evaporated PdAu metal to the epilayers were measured using standard transmission-line techniques. The contact resistance decreases sharply with increasing Te content, falling from 0.6 (Omega) cm² for a film with 8% Te to 3.5 multiplied by 10^-7 (Omega) cm² for a pure ZnTe film. Under the growth and doping conditions used, the hole mobility shows a minimum of about 1 cm²/Vs at about 25% Te. It is expected that by optimizing these single-layer properties, the building blocks of an improved electrical contact to ZnSe can be obtained.

Citation Download Citation

Thomas Marshall, Michael D. Pashley, Albert Sicignano, and L. Zhao "Electrical characterization of p-type Zn(Se,Te):N semiconductor layers", Proc. SPIE 2693, Physics and Simulation of Optoelectronic Devices IV, (1 May 1996); https://doi.org/10.1117/12.238979

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