Paper
1 May 1996 Investigation of electrical properties and thermal stability of ohmic contacts to n-ZnSe for planar contacts on blue-green laser diodes
Karl Schuell, Wolfgang Spahn, V. Hock, U. Lunz, M. Ehinger, Wolfgang Faschinger, Gottfried Landwehr
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Abstract
The formation of contacts by means of indium, aluminum, tin and indium-tin-oxide (ITO) to n-type ZnSe layers grown by MBE has been investigated using x-ray-photoelectron- spectroscopy (XPS) and current-voltage (I-V) techniques. Quite different behavior was found for metal contacts compared to ITO. For the latter it is possible to form ohmic contacts for ZnSe doping levels in the range of n equals 2 multiplied by 1017 to 3.5 multiplied by 1018 cm-3 with specific contact resistances as low as Rc equals 9 multiplied by 10-3 (Omega) cm2. Whereas metal contacts behave according to thermionic emission theory with nonlinear I-V-curves depending on the doping level of ZnSe epilayers.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Karl Schuell, Wolfgang Spahn, V. Hock, U. Lunz, M. Ehinger, Wolfgang Faschinger, and Gottfried Landwehr "Investigation of electrical properties and thermal stability of ohmic contacts to n-ZnSe for planar contacts on blue-green laser diodes", Proc. SPIE 2693, Physics and Simulation of Optoelectronic Devices IV, (1 May 1996); https://doi.org/10.1117/12.238969
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KEYWORDS
Doping

Indium

Metals

Aluminum

Tin

Annealing

Resistance

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