Paper
1 May 1996 Semiconductor microcavities in the strong coupling regime
David V. Wick, Thomas R. Nelson Jr., Eric K. Lindmark, Hyatt M. Gibbs, Galina Khitrova, Kuochou Tai
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Abstract
A single narrow-linewidth quantum-well absorption peak is coupled to the single-mode resonance of a moderately high reflectivity microcavity, resulting in an anticrossing curve as a function of relative detuning. For zero detuning, two cavity peaks and two photoluminescence peaks are seen. Two quantum wells with different resonant energies result in a system of three coupled oscillators. Nonlinear studies include determination of the nonlinearities of the quantum wells, observation of optical bistability, and saturation of the microcavity transmission.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
David V. Wick, Thomas R. Nelson Jr., Eric K. Lindmark, Hyatt M. Gibbs, Galina Khitrova, and Kuochou Tai "Semiconductor microcavities in the strong coupling regime", Proc. SPIE 2693, Physics and Simulation of Optoelectronic Devices IV, (1 May 1996); https://doi.org/10.1117/12.238950
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Cited by 3 scholarly publications.
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KEYWORDS
Quantum wells

Optical microcavities

Absorption

Excitons

Mirrors

Gallium arsenide

Oscillators

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