Modeling of optically switched resonant tunneling diodes

Paul Sotirelis; Dejan Jovanovic; Vijit Sabnis; Theodore S. Moise

doi:10.1117/12.238390

19 April 1996 Modeling of optically switched resonant tunneling diodes

Paul Sotirelis, Dejan Jovanovic, Vijit Sabnis, Theodore S. Moise

Proceedings Volume 2694, Quantum Well and Superlattice Physics VI; (1996) https://doi.org/10.1117/12.238390
Event: Photonics West '96, 1996, San Jose, CA, United States

Abstract

We simulate the current-voltage characteristics of an InGaAs/AlAs resonant-tunneling diode under dark and illuminated conditions. The current is given by a tunneling formula that has been generalized to allow for quantum mechanical effects in the contacts. The optically generated carriers effect on the current-voltage characteristic is included through the use of a rate equation. This method of determining the optical response is shown to be accurate at low intensity and useful for extracting the recombination lifetime. The existing simulator shows great promise as a design tool for optical RTDs and related devices.

Citation Download Citation

Paul Sotirelis, Dejan Jovanovic, Vijit Sabnis, and Theodore S. Moise "Modeling of optically switched resonant tunneling diodes", Proc. SPIE 2694, Quantum Well and Superlattice Physics VI, (19 April 1996); https://doi.org/10.1117/12.238390

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