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Photoluminescence of erbium-doped hydrogenated amorphous silicon was observed and compared with that of crystalline erbium-doped silicon. It is shown that a-Si:H:Er exhibits efficient room-temperature photoluminescence at 1.537 micrometer which is as strong as the emission from optimized c-Si:Er at 2 K. Practically no temperature quenching of the emission intensity in the range 2 - 300 K is observed. Saturation of erbium luminescence on increase of excitation level occurs at higher intensities of pumping beam than in c-Si:Er indicating shorter radiation lifetime of erbium ions.
Mikhail S. Bresler,Oleg B. Gusev,V. K. Kudoyarova,A. N. Kuznetsov,Petr E. Pak,E. I. Terukov,Irina N. Yassievich, andB. P. Zakharchenya
"Room-temperature photoluminescence of erbium-doped amorphous hydrogenated silicon", Proc. SPIE 2706, Tenth Feofilov Symposium on Spectroscopy of Crystals Activated by Rare-Earth and Transitional-Metal Ions, (3 January 1996); https://doi.org/10.1117/12.229154
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Mikhail S. Bresler, Oleg B. Gusev, V. K. Kudoyarova, A. N. Kuznetsov, Petr E. Pak, E. I. Terukov, Irina N. Yassievich, B. P. Zakharchenya, "Room-temperature photoluminescence of erbium-doped amorphous hydrogenated silicon," Proc. SPIE 2706, Tenth Feofilov Symposium on Spectroscopy of Crystals Activated by Rare-Earth and Transitional-Metal Ions, (3 January 1996); https://doi.org/10.1117/12.229154