Alternate rigorous method for photolithographic simulation based on profile sampling

Bernd H. Kleemann; Joerg Bischoff; Alfred K. K. Wong

doi:10.1117/12.240978

7 June 1996 Alternate rigorous method for photolithographic simulation based on profile sampling

Bernd H. Kleemann, Joerg Bischoff, Alfred K. K. Wong

Proceedings Volume 2726, Optical Microlithography IX; (1996) https://doi.org/10.1117/12.240978
Event: SPIE's 1996 International Symposium on Microlithography, 1996, Santa Clara, CA, United States

Abstract

Rigorous models for simulations in optical lithography have become increasingly important as the feature sizes being formed are ever closer to the resolution limit. The novel approach of integral equation system method with sampling along the profile (IESMP) is investigated and compared with other rigorous approaches such as the rigorous coupled-wave analysis (RCWA) and the time-domain finite-difference method. The IESMP, essentially based on a parameterization of the topography being simulated and able to treat all kinds of structures, including those with vertical boundaries and with overhanging parts, is a very flexible and exact method. So, it could serve as a gauge for the comparison of different algorithms and codes. As it is shown, IESMP and RCWA calculations for TM polarization already differ for shallow metal structures.

Citation Download Citation

Bernd H. Kleemann, Joerg Bischoff, and Alfred K. K. Wong "Alternate rigorous method for photolithographic simulation based on profile sampling", Proc. SPIE 2726, Optical Microlithography IX, (7 June 1996); https://doi.org/10.1117/12.240978

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