Practical implementation of alternating PSM to memory device of sub-0.25-um technology

Chang-Nam Ahn; Hung-Eil Kim; Hee-Bom Kim; Ki-Ho Baik

doi:10.1117/12.240916

7 June 1996 Practical implementation of alternating PSM to memory device of sub-0.25-um technology

Chang-Nam Ahn, Hung-Eil Kim, Hee-Bom Kim, Ki-Ho Baik

Proceedings Volume 2726, Optical Microlithography IX; (1996) https://doi.org/10.1117/12.240916
Event: SPIE's 1996 International Symposium on Microlithography, 1996, Santa Clara, CA, United States

Abstract

An alternating phase shift mask is very effective to memory devices which have highly repeated patterns. In order to apply the alternating phase shift mask to real device, we have investigated the design problems such as proximity effect, phase contradiction, phase transition, and linewidth variation. We also design various hard defects in order to check defect printability on wafer. Using i-line lithography with an alternating phase shift mask, we obtain useful focus latitude of 1.2micrometers for bit line of 256M DRAM. Deep UV alternating phase shift mask is used for isolation patterns with design rule of 0.16micrometers . The experimental and simulation results for phase-induced problems and defect printability on wafer are described in detail.

Citation Download Citation

Chang-Nam Ahn, Hung-Eil Kim, Hee-Bom Kim, and Ki-Ho Baik "Practical implementation of alternating PSM to memory device of sub-0.25-um technology", Proc. SPIE 2726, Optical Microlithography IX, (7 June 1996); https://doi.org/10.1117/12.240916

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