Signamization

Burn Jeng Lin

doi:10.1117/12.240965

7 June 1996 Signamization

Burn Jeng Lin

Proceedings Volume 2726, Optical Microlithography IX; (1996) https://doi.org/10.1117/12.240965
Event: SPIE's 1996 International Symposium on Microlithography, 1996, Santa Clara, CA, United States

Abstract

This paper shows the suitability of i-line photolithography for production at 0.30 micrometers . The process performance is demonstrated through the use of off-axis illumination, high NA projection lens, and a state of the art photoresist system. The minimum required depth of focus for a suitable 0.03 micrometers process is derived as 0.95 micrometers over at least a 10 percent process window. This will result in a 0.60 micrometers common corridor over a square 22 mm imaging field. In addition to the dense and isolated lines, a preliminary investigation of contact hole performance using chrome and phase shift masks was completed.

Citation Download Citation

Burn Jeng Lin "Signamization", Proc. SPIE 2726, Optical Microlithography IX, (7 June 1996); https://doi.org/10.1117/12.240965

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