Advanced heterostructures for In1-xAlxSb and Hg1-xCdxTe detectors and emitters

Charles Thomas Elliott

doi:10.1117/12.243485

27 June 1996 Advanced heterostructures for In_1-xAl_xSb and Hg_1-xCd_xTe detectors and emitters

Charles Thomas Elliott

Proceedings Volume 2744, Infrared Technology and Applications XXII; (1996) https://doi.org/10.1117/12.243485
Event: Aerospace/Defense Sensing and Controls, 1996, Orlando, FL, United States

Abstract

Multilayer, epitaxial, heterostructure devices have been fabricated in In_1-xAl_xSb by molecular beam epitaxy and in Hg_1-xCdxTe by metallo-organic vapor phase epitaxy. The principal motivation was to produce devices which will operate with little or no cooling. Results are presented for InSb and MCT diode detectors operating in both equilibrium and non-equilibrium modes at ambient and near ambient temperatures. An uncooled MCT detector has demonstrated near shot-noise limited detection of carbon- dioxide laser radiation in a heterodyne receiver. Uncooled, light-emitting diodes have demonstrated useful power outputs in both positive and negative luminescence at wavelengths out to 11 micrometers. A diode injection laser has been demonstrated in InSb giving an output at 5.1 micrometer and 90 K.

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Charles Thomas Elliott "Advanced heterostructures for In_1-xAl_xSb and Hg_1-xCd_xTe detectors and emitters", Proc. SPIE 2744, Infrared Technology and Applications XXII, (27 June 1996); https://doi.org/10.1117/12.243485

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